View ixsp10n60b2d1 datasheet:

High Speed IGBT IXSA 10N60B2D1VCES = 600 VIXSP 10N60B2D1with Diode IC25 = 20 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetD1Symbol Test Conditions Maximum RatingsTO-263 (IXSA)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VEC (TAB)IC25 TC = 25C20 ATO-220AB (IXSP)IC110 TC = 110C10 AIF(110) 11 AICM TC = 25C, 1 ms 30 ASSOA VGE= 15 V, TJ = 125C, RG = 82 ICM = 20 AC (TAB)(RBSOA) Clamped inductive load, VGE = 20 V @ 0.8 VCESGtSC VGE = 15 V, VCE = 360 V, TJ = 125C 10 s CE(SCSOA) RG = 150 , non repetitivePC TC = 25C 100 WG = Gate C = CollectorTJ -55 ... +150 CE = Emitter TAB = CollectorTJM 150 CTstg -55 ... +150 CFeatures International standard packagesMaximum lead temperature for soldering 300

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