View ixsq20n60b2d1 datasheet:

IXSH 20N60B2D1VCES = 600 VHigh Speed IGBTIC25 = 35 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C35 AG = Gate C = CollectorIC110 TC = 110C20 AE = Emitter TAB = CollectorIF(110) 21 AICM TC = 25C, 1 ms 60 ASSOA VGE = 15 V, TJ = 125C, RG = 82 ICM = 32 A(RBSOA) Clamped inductive load @ 0.8 VCESFeaturestSC VGE = 15 V, VCE = 360 V, TJ = 125C 10 s International standard package(SCSOA) RG = 82 , non repetitive Guaranteed Short Circuit SOAPC TC = 25C 190 Wcapability Low VCE(sat)TJ -55 ... +150 C- for low on-state conduction lossesTJM 150 C High current handling capability MOS

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