View ixtf02n450 datasheet:

Advance Technical InformationHigh Voltage VDSS = 4500VIXTF02N450Power MOSFETID25 = 200mA RDS(on) 750 (Electrically Isolated Tab)ISOPLUS i4-PakTMN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings12Isolated TabVDSS TJ = 25C to 150C 4500 V5VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 V1 = Gate 5 = DrainVGSM Transient 30 V2 = SourceID25 TC = 25C 200 mAIDM TC = 25C, Pulse Width Limited by TJM 600 mAPD TC = 25C78 WFeaturesTJ - 55 ... +150 CTJM 150 C Silicon Chip on Direct-Copper BondTstg - 55 ... +150 C(DCB) Substrate TL 1.6mm (0.062 in.) from Case for 10s 300 CIsolated Mounting SurfaceTSOLD Plastic Body for 10s 260 C 4500V~ Electrical Isolation Molding Epoxies meet UL 94 V-0FC Mounting Force 20..120 / 4.5..27 N/lb.Flammabil

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