View ixtk110n20l2 datasheet:

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IXTK110N20L2FEATURESWith TO-3PL packageLow input capacitance and gate chargeHigh speed switchingLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 30 VGSSI Drain Current-Continuous 110 ADI Drain Current-Single Pulsed 275 ADMP Total Dissipation @T =25 960 WD CTj Max. Operating Junction Temperature 150 Storage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.13/WRth(ch-a) Channel-to-ambient thermal resi

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