All Transistors. Datasheet

 

View ixtk140n20p datasheet:

ixtk140n20pixtk140n20p

VDSS = 200 VIXTK 140N20PPolarHTTMID25 = 140 APower MOSFET RDS(on) 18 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 175 C 200 VVDGR TJ = 25 C to 175 C; RGS = 1 M 200 VVGS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C 140 A D(TAB)SID(RMS) External lead current limit 75 AIDM TC = 25 C, pulse width limited by TJM 280 AG = Gate D = DrainS = Source TAB = DrainIAR TC = 25 C60 AEAR TC = 25 C 100 mJEAS TC = 25 C4 JFeaturesdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 10 V/nslInternational standard packageTJ 150 C, RG = 4 lUnclamped Inductive Switching (UIS)PD TC = 25 C 800 WratedlLow package inductanceTJ -55 ... +175 C- easy to drive and to protectTJM 175 CTstg -55

 

Keywords - ALL TRANSISTORS DATASHEET

 ixtk140n20p.pdf Design, MOSFET, Power

 ixtk140n20p.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixtk140n20p.pdf Database, Innovation, IC, Electricity

 

 
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