View ixtk180n15p datasheet:

VDSS = 150 VIXTK 180N15PPolarHTTMID25 = 180 APower MOSFET RDS(on) 10 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVDSS Continuous 20 VVGSM Transient 30 VGID25 TC = 25 C 180 A D(TAB)SID(RMS) External lead current limit 75 AIDM TC = 25 C, pulse width limited by TJM 380 AIAR TC = 25 C60 AG = Gate D = DrainS = Source TAB = DrainEAR TC = 25 C 100 mJEAS TC = 25 C4 Jdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 10 V/nsTJ 150 C, RG = 4 FeaturesPD TC = 25 C 800 WlInternational standard packageTJ -55 ... +175 ClUnclamped Inductive Switching (UIS)TJM 175 CratedTstg -55 ... +150 ClLow package inductanceTL 1.6 mm (0.062

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