View ixtm24n50 datasheet:

Isc N-Channel MOSFET Transistor IXTM24N50FEATURESWith To-3 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-Source Voltage 30 VGSSI Drain Current-Continuous 24 ADI Drain Current-Single Pulsed 96 ADMP Total Dissipation @T =25 300 WD CT Max. Operating Junction Temperature 150 chStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.421isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkIsc N-Channel MOSFET Transistor IXTM24N50ELECTRICAL CHARACTER

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