All Transistors. Datasheet

 

View ixtt170n10p ixtq170n10p ixtk170n10p datasheet:

ixtt170n10p_ixtq170n10p_ixtk170n10pixtt170n10p_ixtq170n10p_ixtk170n10p

PolarTM VDSS = 100VIXTT170N10PID25 = 170APower MOSFETIXTQ170N10P RDS(on) 9m IXTK170N10PTO-268 (IXTT)N-Channel Enhancement ModeAvalanche RatedGSTabTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C, RGS = 1M 100 VGDVGSS Continuous 20 VSTabVGSM Transient 30 VID25 TC = 25C 170 ATO-264 (IXTK)IL(RMS) External Lead Current Limit 160 AIDM TC = 25C, Pulse Width Limited by TJM 350 AIA TC = 25C 60 AEAS TC = 25C 2 JGdv/dt IS IDM, VDD VDSS, TJ 175C 10 V/ns TabDSPD TC = 25C 715 WTJ -55 to +175 C G = Gate D = DrainS = Source Tab = DrainTJM +175 CTstg -55 to +175 CFeaturesTL 1.6mm (0.063in) from Case for 10s 300 CTSOLD Plastic Body for 10s 260 C International Standard PackagesMd Moun

 

Keywords - ALL TRANSISTORS DATASHEET

 ixtt170n10p ixtq170n10p ixtk170n10p.pdf Design, MOSFET, Power

 ixtt170n10p ixtq170n10p ixtk170n10p.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixtt170n10p ixtq170n10p ixtk170n10p.pdf Database, Innovation, IC, Electricity

 

 
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