All Transistors. Datasheet

 

View ixxx110n60b4h1 datasheet:

ixxx110n60b4h1ixxx110n60b4h1

Advance Technical InformationVCES = 600VXPTTM 600V IXXK110N60B4H1IC100 = 110AGenX4TM w/ Diode IXXX110N60B4H1 VCE(sat) 2.0V tfi(typ) = 27nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous 20 VPLUS247 (IXXX)VGEM Transient 30 VIC25 TC= 25C ( Chip Capability ) 210 AILRMS Terminal Current Limit 160 AIC100 TC = 100C 110 AIF110 TC = 110C 50 AGICM TC = 25C, 1ms 400 AGCTabESSOA VGE = 15V, TVJ = 150C, RG = 2 ICM = 220 A(RBSOA) Clamped Inductive Load @VCE VCESG = Gate E = Emittertsc VGE= 15V, VCE = 360V, TJ = 150C 10 s C = Collector Tab = Collector(SCSOA) RG = 82, Non RepetitivePC TC = 25C 695 WTJ -55 ... +150 C Features

 

Keywords - ALL TRANSISTORS DATASHEET

 ixxx110n60b4h1.pdf Design, MOSFET, Power

 ixxx110n60b4h1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixxx110n60b4h1.pdf Database, Innovation, IC, Electricity

 

 
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