View ixyp8n90c3d1 datasheet:

Preliminary Technical Information900V XPTTM IGBTs VCES = 900VIXYA8N90C3D1GenX3TM w/Diode IC110 = 8AIXYP8N90C3D1 VCE(sat) 2.5V tfi(typ) = 130nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 900 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 VTO-220AB (IXYP)VGEM Transient 30 VIC25 TC = 25C 20 AIC110 TC = 110C 8 AIF110 TC = 110C 12 AGICM TC = 25C, 1ms 48 A C C (Tab)EIA TC = 25C 4 AEAS TC = 25C 15 mJG = Gate C = CollectorSSOA VGE = 15V, TVJ = 150C, RG = 30 ICM = 16 AE = Emitter Tab = Collector(RBSOA) Clamped Inductive Load @VCE VCESPC TC = 25C 125 WFeaturesTJ -55 ... +175 CTJM 175 C Optimized for Low Switching LossesTstg -55 ... +175 C Square RBSOA TL Maxim

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 ixyp8n90c3d1.pdf Design, MOSFET, Power

 ixyp8n90c3d1.pdf RoHS Compliant, Service, Triacs, Semiconductor

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