View ixz318n50 datasheet:

IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) Symbol Test Conditions Maximum Ratings 0.34 TJ = 25C to 150C VDSS 500 V PDC = 880 W TJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25C ID25 19 A Tc = 25C, pulse width limited by TJM IDM 95 A Tc = 25C IAR 19 A Tc = 25C EAR TBD mJ IS IDM, di/dt 100A/s, VDD VDSS, 5 V/ns Tj 150C, RG = 0.2 dv/dt IS = 0 >200 V/ns PDC 880 W DRAINTc = 25C PDHS 440 W GATETamb = 25C PDAMB 3.0 W RthJC 0.17 C/W SG1 SG2 SD1 SD2RthJHS 0.34 C/W Features Symbol Test Conditions Characteristic Values Isol

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