View jffc7n65e datasheet:

JFFC7N65E 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 7A, 650V, RDS(on)typ. = 1.65@VGS = 10 V Advanced planar process Low gate charge minimize switching loss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings TC = 25 unless otherwise noted Symbol Parameter JFFC7N65E Units VDSS Drain Source Voltage 650 V Continuous ( TC = 25 ) 7* A ID Drain Current Continuous ( TC = 1

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