View kbt5401c datasheet:

KBT5401C PNP Silicon Transistor 2018.0302 2018.0302 2018.0302 2018.0302 1 000 2018.03.02 AUK Dalian 1 KBT5401C PNP Silicon Transistor Descriptions General purpose amplifier High voltage application PIN Connection Features High collector breakdown voltage: VCBO = -160V, VCEO = -160V Low collector saturation voltage: VCE(sat)=-0.5V(MAX.) Complementary pair with KBT5551C Ordering Information Type NO. Marking Package Code NFN KBT5401C SOT-23 Device Code Year& Week Code Dalian Absolute maximum ratings Ta=25C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -160 V Collecto

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