View kgf15n60fda datasheet:

SEMICONDUCTORKGF15N60FDATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powerFEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Times 5us(@TC=100)Extremely enhanced avalanche capabilityMAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCESCollector-Emitter Voltage 600 VVGES 20Gate-Emitter Voltage V15 A@Tc=25ICCollector Current7.5 A@Tc=100ICM*Pulsed Collector Current 30 AIFDiode Continuous Forward Current @Tc=2515 AIFM*Diode Maximum Forward Current 45 A50 W@Tc=25PDMaximum Power Dissipation20 W@Tc=100Tj*Repetitive rating : Pulse width limited by max. junction temperature

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