View ksd882 datasheet:

November 2007KSD882NPN Epitaxial Silicon TransistorRecommended Applications Audio Frequency Power AmplifierFeatuers Low Speed SwitcingTO-1261 Complement to KSB772. 1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsBVCBO Collector-Base Voltage 40 VBVCEO Collector-Emitter Voltage 30 VBVEBO Emitter-Base Voltage 5 VIC Collector Current(DC) 3 AIC Collector Current(Pulse)** 7 AIB Base Current 0.6 APD Total Device Dissipation(TC=25C) 10 WTotal Device Dissipation(Ta=25C) 1 WTJ, TSTG Junction and Storage Temperature - 55 ~ +150 C* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.** PW10ms, Duty Cycle50%Electrical Characteristics. Ta=25C unless otherwise noted Symbol Parameter Test Condition Min.

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