View kse350 datasheet:

KSE350 PNP EPITAXIAL SILICON TRANSISTORHIGH COLLECTOR-EMITTERTO-126SUSTAINING VOLTAGEHIGH VOLTAGE GENERAL PURPOSEAPPLICATIONSSUITABLE FOR TRANSFORMERComplement to KSE340ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter- Base Voltage VEBO -5 V Collector Current IC -500 mA Collector Dissipation (Tc=25 ) PC 20 W Junction Temperature TJ 150 1. Emitter 2. Collector 3. Base Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC=25 )Characteristic Symbol Test Condition Min Max Unit Collector Emitter Sustaining Voltage VCEO(sus) IC = - 1mA, IB = 0 -300 V Collector Cutoff Current ICBO VCB = - 300V, IE = 0 -100 uA Emitter Cutoff Current IEBO VBE = - 3V, Ic = 0 -100 uA DC Current Gain hFE VCE = - 10V, IC = - 50mA 30 240KSE350 PNP EPITAXIAL SILICON

Keywords - ALL TRANSISTORS DATASHEET

 kse350.pdf Design, MOSFET, Power

 kse350.pdf RoHS Compliant, Service, Triacs, Semiconductor

 kse350.pdf Database, Innovation, IC, Electricity