View ktb688 datasheet:

isc Silicon PNP Power Transistor KTB688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type KTD718Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCBOV Collector-Emitter Voltage -120 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -10 ACI Base Current-Continuous -1 ABCollector Power DissipationP 80 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transi

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