View ktb985 datasheet:

SEMICONDUCTOR KTB985TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTB DFEATURES Adoption of MBIT processes.DIM MILLIMETERSP Low collector-to-emitter saturation voltage.DEPTH:0.2A 7.20 MAX Fast switching speed. B 5.20 MAXCC 0.60 MAXS Large current capacity and wide ASO.D 2.50 MAXQE 1.15 MAXK Complementary to KTD1347.F 1.27G 1.70 MAXH 0.55 MAXFF_J 14.00 + 0.50K 0.35 MINHH H_L 0.75 + 0.10E M 4MMAXIMUM RATING (Ta=25 )N 25O 1.25CHARACTERISTIC SYMBOL RATING UNITL1 2 3HP 1.50Q 0.10 MAXN NVCBO -60 VCollector-Base Voltage_R 12.50 + 0.501. EMITTERS 1.00VCEO -50 VVollector-Emitter Voltage2. COLLECTOR3. BASEVEBOEmitter-Base Voltage -6 VICCollector Current -3 ATO-92LICPCollector Current (Pulse) -6 APCCollecto

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