View ktc1006 datasheet:

SEMICONDUCTOR KTC1006TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORCB TRANSCEIVER TX DRIVER APPLICATION.B DFEATURES Recommended for Driver Stage Application ofAM 4W Transmitter.DIM MILLIMETERSP High Power Gain.DEPTH:0.2A 7.20 MAX Wide Area of Safe Operation. B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXH 0.55 MAXFFMAXIMUM RATINGS (Ta=25 ) _J 14.00 + 0.50K 0.35 MINHH HCHARACTERISTIC SYMBOL RATING UNIT_L 0.75 + 0.10E M 4MVCBOCollector-Base Voltage 80 VN 25O 1.25L1 2 3VCER HCollector-Emitter Voltage 80 VP 1.50Q 0.10 MAXN N_VEBOEmitter-Base Voltage 5 V R 12.50 + 0.501. EMITTERS 1.00IC 2. COLLECTORCollector Current 800 mA3. BASEIEEmitter Current -800 mAPCColletor Power Dissipation 1 WTO-92LTjJunction Temperature 150 Tstg -55 150 Storage Temperature Ran

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