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View l2n7002lt1g datasheet:

l2n7002lt1gl2n7002lt1g

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002LT1G115 mAmps, 60 VoltsNChannel SOT233 We declare that the material of product 1compliance with RoHS requirements.2 ESD Protected:1000VCASE 318, STYLE 21SOT 23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current ID 115 mAdcSimplified Schematic Continuous TC = 25C (Note 1.) ID 75 Continuous TC = 100C (Note 1.) IDM 800 Pulsed (Note 2.)Gate 1GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp 50 s) VGSM 40 Vpk3 DrainTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitSource 2Total Device Dissipation FR5 Board PD 225 mW(Note 3.) TA = 25C 1.8 mW/CDerate above 25C(Top View)Thermal Resistance, Junction

 

Keywords - ALL TRANSISTORS DATASHEET

 l2n7002lt1g.pdf Design, MOSFET, Power

 l2n7002lt1g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 l2n7002lt1g.pdf Database, Innovation, IC, Electricity

 

 
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