All Transistors. Datasheet

 

View l2sd882q datasheet:

l2sd882ql2sd882q

LESHAN RADIO COMPANY, LTD.PNPSURFACEMOUNTTRANSISTORL2SB882Q L2SB882PWe declare that the material of product compliance with RoHS requirements.4 123DEVICE MARKING AND ORDERING INFORMATIONSOT-89Device Marking ShippingL2SB882Q 82Q 2500/Tape&Reel2,4L2SB882P 82P 2500/Tape&ReelCOLLECTOR1MAXIMUM RATINGS(Ta=25C)BASEParameter Symbol Limits Unit3Collector-base voltage VCBO 40 VEMITTERCollector-emitter voltage VCEO 30 VEmitter-base voltageVEBO 6 VPeak Pulse Current ICM 3 ACollector power dissipation PC 0.5 WJunction temperature Tj 150 CStorage temperature Tstg -55 to 150 CELECTRICAL CHARACTERISTICS(Ta=25C)Parameter Symbol Min. Typ. Max. Unit ConditionsCollector-base breakdown voltage BVCBO 40 - - V IC= 100ACollector-emitter breakdown voltage BVCEO 30 - - V IC= 10mAEmitter-base breakdown voltage BVEBO 6 - - V IE= 100

 

Keywords - ALL TRANSISTORS DATASHEET

 l2sd882q.pdf Design, MOSFET, Power

 l2sd882q.pdf RoHS Compliant, Service, Triacs, Semiconductor

 l2sd882q.pdf Database, Innovation, IC, Electricity

 

 
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