All Transistors. Datasheet

 

View lirfz44n datasheet:

lirfz44nlirfz44n

LESHAN RADIO COMPANY, LTD.55V N-Channel Mode MOSFET VDS=55V LIRFZ44NRDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedTO-220DGSAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 49ID @ TC = 100C Continuous Drain Current, VGS @ 10V 35 AIDM Pulsed Drain Current 160PD @TC = 25C Power Dissipation 94 WLinear Derating Factor 0.63 W/CVGS Gate-to-Source Voltage 20 VIAR Avalanche Current 25 AEAR Repetitive Avalanche Energy 9.4 mJdv/dt Peak Diode Recovery dv/dt 5.0 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature RangeCSoldering Temperature, for 10 seconds 300 (1.6mm from case )Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)Thermal

 

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 lirfz44n.pdf Design, MOSFET, Power

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