View lnc7n65d lnd7n65d lng7n65d lnh7n65d lnf7n65d datasheet:

LNC7N65D\LND7N65D\LNG7N65D\LNH7N65D\ LNF7N65D Lonten N-channel 650V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.4 superior switching performance and high avalance Qg,typ 20.7nC energy. Features Low RDS(on) Low gate charge (typ. Qg =20.7nC) TO-251 TO-252 TO-220 TO-220F TO-262 100% UIS tested D RoHS compliant G Applications S Power faction correction. Pb Switched mode power supplies. N-Channel MOSFET LED driver. Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 650 V Continuous drain current ( TC = 25 ID 7 A C ) ( TC = 100 4.3 A C ) Pulsed drain current 1) IDM 28 A Gate-Source voltage VGSS 30 V Avalanche en

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 lnc7n65d lnd7n65d lng7n65d lnh7n65d lnf7n65d.pdf Design, MOSFET, Power

 lnc7n65d lnd7n65d lng7n65d lnh7n65d lnf7n65d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 lnc7n65d lnd7n65d lng7n65d lnh7n65d lnf7n65d.pdf Database, Innovation, IC, Electricity