View m8050 to-92 datasheet:

M8050(NPN)TO-92 TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Dimensions in inches and (millimeters)TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A,IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO* IC= 1mA, IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 VCollector cut-off current ICBO VCB= 35V, IE=0 0.1 A Collector cut-off current ICEO VC

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