View mdf18n50 datasheet:

MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27 General Description Features The MDF18N50 uses advanced MagnaChips MOSFET V = 500V DSTechnology, which provides low on-state resistance, high I = 18A @V = 10V D GS R 0.27 @V = 10V switching performance and excellent quality. DS(ON) GSMDF18N50 is suitable device for SMPS, high speed switching Applications and general purpose applications. Power Supply PFC High Current, High Speed Switching DGSAbsolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V TC=25oC 18 A Continuous Drain Current () ID TC=100oC 11 A Pulsed Drain Current(1) IDM 72 A TC=25oC 37 W Power Dissipation PD W/ oC Derate above 25 oC 0.29 Peak Diode Recovery dv/dt(3) Dv/dt 4.5 V/ns Single Pulse Avalanche Energy(

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