View mdf18n50bth mdp18n50bth datasheet:
MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27General Description Features The MDP/F18N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general purpose applications. Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol MDP18N50B MDF18N50B Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V TC=25oC 18 18* A Continuous Drain Current ID TC=100oC 11 11* A Pulsed Drain Current(1) IDM 72 72* A TC=25oC 236 37 W Power Dissipation PD Derate above 25 oC 1.89 0.29 W/ oC Repetitive Avalanche Energy(1) EAR 23.6 mJ Peak Diode Recovery dv/dt(3) dv/dt 4.5 V/ns
Keywords - ALL TRANSISTORS DATASHEET
mdf18n50bth mdp18n50bth.pdf Design, MOSFET, Power
mdf18n50bth mdp18n50bth.pdf RoHS Compliant, Service, Triacs, Semiconductor
mdf18n50bth mdp18n50bth.pdf Database, Innovation, IC, Electricity



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet