View mdq18n50gth mdq18n50gtp datasheet:

MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27 General Description Features . V = 500V DSThese N-channel MOSFET are produced using advanced I = 20.0A @ V = 10V D GSMagnaChips MOSFET Technology, which provides low on- R 0.27 @ V = 10V DS(ON) GSstate resistance, high switching performance and excellent quality. Applications These devices are suitable device for SMPS, high Speed Power Supply switching and general purpose applications. HID Lighting DGSG DSG G TO-247 Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage V 500 V DSSGate-Source Voltage V 30 V GSS T =25oC 20 A C Continuous Drain Current ID T =100oC 12.5 A C Pulsed Drain Current(1) I 80 A DM T =25oC 245 W C Power Dissipation P DDerate above 25 oC 1.96 W/ oC

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