View mje13001e1 datasheet:

MJE13001E1(3DD13001E1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.45 A C P (Ta=25) 1.0 W CT 150 j T -55150 stg /Electrical characteristics(Ta=25) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 600 V CBO C EV I =10mA I =0 400 V CEO C BV I =1mA I =0 9.0 V EBO E CI V =600V I =0 0.1 mA CBO CB EI V =400V I =0 0.1 mA CEO CE BI V =9.0V I =0 0.1 mA EBO EB Ch V =5.0V I =100mA 10 40 FE CE CV I =100mA I =20mA 0.5 V CE(sat) C BV I =100mA I =20mA 1.2 V BE(sat) C

Keywords - ALL TRANSISTORS DATASHEET

 mje13001e1.pdf Design, MOSFET, Power

 mje13001e1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje13001e1.pdf Database, Innovation, IC, Electricity