All Transistors. Datasheet

 

View mje13002g1 datasheet:

mje13002g1mje13002g1

MJE13002G1(3DD13002G1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.75 A C P (Ta=25) 1.0 W CT 150 j T -55150 stg /Electrical characteristics(Ta=25) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 600 V CBO C EV I =10mA I =0 400 V CEO C BV I =1mA I =0 9.0 V EBO E CI V =600V I =0 0.1 mA CBO CB EI V =400V I =0 0.1 mA CEO CE BI V =9.0V I =0 0.1 mA EBO EB Ch

 

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 mje13002g1.pdf Design, MOSFET, Power

 mje13002g1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje13002g1.pdf Database, Innovation, IC, Electricity

 

 
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