View mje13003e1 datasheet:

MJE13003E1(3DD13003E1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBOV 450 V CEOV 9 V EBOI 0.45 A CP (Ta=25) 1.0 W CT 150 jT -55150 stg/Electrical characteristics(Ta=25) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 700 V CBO C EV I =10mA I =0 450 V CEO C BV I =1mA I =0 9 V EBO E CI V =700V I =0 0.1 mA CBO CB EI V =450V I =0 0.1 mA CEO CE BI V =9.0V I =0 0.1 mA EBO EB Ch V =5.0V I

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