View mje13003n8 datasheet:

MJE13003N8(3DD13003N8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 2.0 A C P (Ta=25) 2.0 W CP (Tc=25) 50 W CT 150 j T -55150 stg /Electrical characteristics(Ta=25) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 700 V CBO C EV I =10mA I =0 400 V CEO C BV I =1mA I =0 9.0 V EBO E CI V =700V I =0 0.1 mA CBO CB EI V =400V I =0 0.1 mA CEO CE BI V =9.0V I =0

Keywords - ALL TRANSISTORS DATASHEET

 mje13003n8.pdf Design, MOSFET, Power

 mje13003n8.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje13003n8.pdf Database, Innovation, IC, Electricity