View mje13003vi1 datasheet:

MJE13003VI1 3DD13003VI1 NPN /SILICON NPN TRANSISTOR 110V Purpose: Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. Features: High voltage capability,high speed switching,wide SOA. /Absolute maximum ratings(Tc=25) Symbol Rating Unit V CBO 400 V V 200 V CEO V 9 V EBO I 2.5 A C P 1.0 W CT 150 j T -55150 stg /Electrical characteristics(Tc=25) Rating Symbol Test Condition Unit Min Typ Max V I =1mA I =0 400 V CBO C EV I =10mA I =0 200 V CEO C BV I =1mA I =0 9 V EBO E CI V =400V I =0 0.1 mA CBO CB EI V =200V I =0

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