View mje13004 mje13005 datasheet:

DATA SHEETMJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage VCEV 600 700 V Emitter-Base Voltage VEBO 9.0 VCollector Current IC 4.0 APeak Collector Current ICM 8.0 ABase Current IB 2.0 APeak Base Current IBM 4.0 APower Dissipation (TA=25C) PD 2.0 WPower Dissipation PD 75 WOperating and Storage Junction Temperature TJ,Tstg -65 to +150 C Thermal Resistance JA 62.5 C/WThermal Resistance JC 1.67 C/WELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEV VCE=600V, VBE(OF

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