View mje13005 datasheet:

DATA SHEETMJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL UNITS Collector-Emitter Voltage VCEO 400 VCollector-Emitter Voltage VCEV 700 VEmitter-Base Voltage VEBO 9.0 VCollector Current IC 4.0 APeak Collector Current ICM 8.0 ABase Current IB 2.0 APeak Base Current IBM 4.0 AEmitter Current IE 6.0 APeak Emitter Current IEM 12 APower Dissipation (TA=25C) PD 2.0 WPower Dissipation PD 75 WOperating and Storage Junction Temperature TJ,Tstg -65 to +150 C Thermal Resistance JA 62.5 C/W Thermal Resistance JC 1.67 C/W ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV VCE=700V, VBE

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