View mje13005dc datasheet:

SEMICONDUCTOR MJE13005DCTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.Built-in Free wheeling Diode makes efficient anti saturation operation.Suitable for half bridge light ballast Applications.Low base drive requirement.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 VVCEOCollector-Emitter Voltage 400 VVEBOEmitter-Base Voltage 10 VICDC 5Collector Current AICPPulse 10IBBase Current 2 APC75 WCollector Power Dissipation (Tc=25)TjJunction Temperature 150Tstg -55150 Storage Temperature RangeELECTRICAL CHARACTERISTICS (Ta=25)CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNITIEBO VEB=9V, IC=0Emitter Cut-off Current - - 10AhFE(1) VCE=5V, IC=1A23 - 35DC Current GainhFE(2) VCE=5V, IC=2A8 - -IC=1A, IB=

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