View mje13005df datasheet:

SEMICONDUCTOR MJE13005DFTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ACBuilt-in Free wheeling Diode makes efficient anti saturation operation.DIM MILLIMETERSSSuitable for half bridge light ballast Applications._A 10.0 + 0.3_+B 15.0 0.3ELow base drive requirement.C _2.70 0.3+D 0.76+0.09/-0.05MAXIMUM RATING (Ta=25)_E 3.2 0.2+_F 3.0 0.3+CHARACTERISTIC SYMBOL RATING UNIT_12.0 0.3G +H 0.5+0.1/-0.05VCBOCollector-Base Voltage 800 V_+J 13.6 0.5L LRK _3.7 0.2+VCEOCollector-Emitter Voltage 400 VL 1.2+0.25/-0.1M1.5+0.25/-0.1VEBO MEmitter-Base Voltage 10 VD D _N 2.54 0.1+_IC +DC 5 P 6.8 0.1_+Collector Current A Q 4.5 0.2ICP _Pulse 10 R 2.6 0.2+N NHS 0.5 TypIBBase Current 2 APC30 WCollector Power Dissipa

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