View mje13007a datasheet:

isc Silicon NPN Power Transistor MJE13007ADESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 2.0(Max) @ I = 5.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 850 VCEVV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 9 VEBOI Collector Current-Continuous 8 ACI Collector Current-peak 16 ACMI Base Current 4 ABI Base Current-Peak 8 ABMCollector Power DissipationP 80 WCT =25CT Junction Temperature 150 iStorage Temperature Range -65~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.56 /Wth j-c

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