View mje13009-d datasheet:

MJE13009GSWITCHMODEt SeriesNPN Silicon PowerTransistorsThe MJE13009G is designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They are http://onsemi.comparticularly suited for 115 and 220 V SWITCHMODE applicationssuch as Switching Regulators, Inverters, Motor Controls,12 AMPERESolenoid/Relay drivers and Deflection circuits.NPN SILICONFeaturesPOWER TRANSISTOR VCEO(sus) 400 V and 300 V400 VOLTS - 100 WATTS Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A,100_C is 120 ns (Typ) 700 V Blocking Capability SOA and Switching Applications InformationTO-220AB These Devices are Pb-Free and are RoHS Compliant*CASE 221A-09STYLE 1MAXIMUM RATINGSRating Symbol Value Unit12Collector-Emitter Voltage VCEO(sus) 400 Vdc3

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