View mje13009f datasheet:

isc Silicon NPN Power Transistor MJE13009FDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are particularly suited for115 and 220V switchmode applications such as switchingregulators,inverters,Motor controls,Solenoid/Relay driversand deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Base Voltage 700 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 9 VEBOI Collector Current-Continuous 12 ACI Collector Current-peak 24 ACMI Base Current 6 ABI Base Current-Peak 12 ABMCollector Power Dissipatio

Keywords - ALL TRANSISTORS DATASHEET

 mje13009f.pdf Design, MOSFET, Power

 mje13009f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje13009f.pdf Database, Innovation, IC, Electricity