View mje13009z9 datasheet:

MJE13009Z9(3DD13009Z9) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25) 2.0 W CP (Tc=25) 100 W CT 150 j T -55150 stg /Electrical characteristics(Ta=25) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 700 V CBO C EV I =10mA I =0 400 V CEO C BV I =1mA I =0 9.0 V EBO E CI V =700V I =0 0.1 mA CBO CB EI V =400V I =0 0.1 mA CEO CE BI V =9.0V I =0 0.1 mA EBO EB Ch V =5.0V I =5.0A 10 40 FE CE CV I =8.0A I =1.6A 1.2 V CE(sat) C BV I =8.0A I =1.6A 1.6

Keywords - ALL TRANSISTORS DATASHEET

 mje13009z9.pdf Design, MOSFET, Power

 mje13009z9.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje13009z9.pdf Database, Innovation, IC, Electricity