View mje350 datasheet:

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL SILICON POWER TRANSISTOR MJE350TO126 Plastic PackageECBDesigned for use in Line-Operated Applications sush as Low Power, Line- Operated SeriesPass and Switching Regulators ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 300 VCollector -Base Voltage VCBO 300 VVEBOEmitter Base Voltage 3.0 VICCollector Current Continuous 500 mAPower Dissipation @ Ta=25C PD 1.25 WDerate above 25C 10 mW/CPower Dissipation @ Tc=25C PD 20 WDerate above 25C 0.16 W/COperating And Storage Junction Tj, Tstg - 65 to +150 CTemperature RangeTHERMAL CHARACTERISTICSJunction to Ambient in free air Rth (j-a)100 C/WJunction to Case Rth (j-c)6.25 C/WELECTRICAL CHARACTERISTICS (Tc=25C unless specified othe

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