View mje350 datasheet:

MJE350High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE340TO-12611. Emitter 2.Collector 3.Base..PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 VVEBO Emitter-Base Voltage - 5 VIC Collector Current - 500 mAPC Collector Dissipation (TC=25C) 20 WTJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 CElectrical Characteristics TC=25C unless otherwise notedSymbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = - 1mA, IB = 0 -300 V ICBO Collector Cut-off Current VCB = - 300V, IE = 0 -100 AIEBO Emitter Cut-off Current VBE = - 3V, IC = 0 -100 AhFE DC Current Ga

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