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View mje350g datasheet:

mje350gmje350g

MJE350GPlastic Medium-PowerPNP Silicon TransistorThis device is designed for use in line-operated applications such aslow power, line-operated series pass and switching regulatorsrequiring PNP capability.www.onsemi.comFeatures High Collector-Emitter Sustaining Voltage0.5 AMPERE Excellent DC Current GainPOWER TRANSISTOR Complement to MJE340PNP SILICON These Devices are Pb-Free and are RoHS Compliant*300 VOLTS, 20 WATTSMAXIMUM RATINGSCOLLECTORRating Symbol Value Unit2, 4Collector-Emitter Voltage VCEO 300 VdcEmitter-Base Voltage VEB 3.0 Vdc3Collector Current - Continuous IC 500 mAdcBASETotal Power Dissipation PD@ TC = 25_C 20 W1Derate above 25_C 0.16 mW/_CEMITTEROperating and Storage Junction TJ, Tstg 65 to +150 _CTemperature RangeStresses exceeding those listed in the Maximum Ratings table may damage thedev

 

Keywords - ALL TRANSISTORS DATASHEET

 mje350g.pdf Design, MOSFET, Power

 mje350g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje350g.pdf Database, Innovation, IC, Electricity

 

 
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