View mmbt3906l mmbt3906h datasheet:

YFSEMI ELECTRONSOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) SOT23 FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Dissipation 0.2 W R Thermal resistance junction to ambient 625 /WJATJ Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -40 VCollector-emitter breakdown

Keywords - ALL TRANSISTORS DATASHEET

 mmbt3906l mmbt3906h.pdf Design, MOSFET, Power

 mmbt3906l mmbt3906h.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmbt3906l mmbt3906h.pdf Database, Innovation, IC, Electricity