View mmbt9015lt1 datasheet:

RoHS MMBT9015LT1PNP EPITAXIAL SILICON TRANSISTOR SOT-233LOW FREQRENCY,LOW NOISE AMPLIFIER1 Complemen to MMPT9014LT1 Collector-current:Ic=-100mA 2 Collector-Emiller Voltage:VCE=-45V1.1.BASE2.EMITTER2.43.COLLECTOR1.3Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VVCEO -45VEmitter-Base Voltage VEBO-5mACollector Current Ic-100oCollector Dissipation Ta=25 C* PD mW225OTjJunction Temperature 150COTstgStorage Temperature -55~150CoElectrical Characteristics (Ta=25 C)Parameter Symbol MIN. TYP. MAX. Unit ConditionBVCBO -50 VIC=-100 A IE=0Collector-Base Breakdown VoltageBVCEO -45 VIC=-1mA IB=0 Collector-Emitter Breakdown Voltage#BVEBO -5 VIE=-100 A IC=0Emitter-Base Breakdown VoltageICBO -50 nACollector-B

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