All Transistors. Datasheet

 

View mmbtsc1623-l4 mmbtsc1623-l5 mmbtsc1623-l6 mmbtsc1623-l7 datasheet:

mmbtsc1623-l4_mmbtsc1623-l5_mmbtsc1623-l6_mmbtsc1623-l7mmbtsc1623-l4_mmbtsc1623-l5_mmbtsc1623-l6_mmbtsc1623-l7

MMBTSC1623 NPN Transistor Features SOT-23 High DC Current gain. High voltage1.Base 2.Emitter 3.CollectorMarking Code: L4: L4. L5: L5. L6: L6. L7: L7. Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base Voltage V 5 V EBOCollector Current I 100 mA CPower Dissipation P 200 mW DJunction Temperature T 150 J Storage Temperature Range T -55 to 150 STG www.pingjingsemi.com 1 / 4 Revison1.0 July-2018 MMBTSC1623 NPN Transistor Electrical Characteristics Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Min. Typ. Max. Unit DC Current Gain 90 - 180 at VCE = 6 V, IC = 1 mA Current Gain Group L4 135 - 270 H L5 FE - 200

 

Keywords - ALL TRANSISTORS DATASHEET

 mmbtsc1623-l4 mmbtsc1623-l5 mmbtsc1623-l6 mmbtsc1623-l7.pdf Design, MOSFET, Power

 mmbtsc1623-l4 mmbtsc1623-l5 mmbtsc1623-l6 mmbtsc1623-l7.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmbtsc1623-l4 mmbtsc1623-l5 mmbtsc1623-l6 mmbtsc1623-l7.pdf Database, Innovation, IC, Electricity

 

 
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