View mmbtsc3356q mmbtsc3356r mmbtsc3356s datasheet:

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 20 VCollector Emitter Voltage VCEO 12 VEmitter Base Voltage VEBO 3 VCollector Current IC 100 mAPower Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Temperature Range TStg - 65 to + 150 C OCharacteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. UnitDC Current Gain at VCE = 10 V, IC = 20 mA Current Gain Group Q hFE 50 - 100 - R hFE 80 - 160 - S hFE 125 - 250 - Collector Cutoff Current ICBO - - 1 Aat VCB = 10 V Emitter Cutoff Current IEBO - - 1 Aat VEB = 1 V Gain Bandwidth Product fT

Keywords - ALL TRANSISTORS DATASHEET

 mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf Design, MOSFET, Power

 mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf Database, Innovation, IC, Electricity