View mmbtsc4081w datasheet:

NPN Silicon Epitaxial Planar TransistorThe transistor is subdivided into three groups Q, R and S according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 7 VCollector Current IC 150 mAPower Dissipation Ptot 200 mW OJunction Temperature Tj 150 C OStorage Temperature Range Tstg - 55 to + 150 C OCharacteristics at Ta = 25 C Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Q hFE 120 - 270 - R hFE 180 - 390 - S hFE 270 - 560 - Collector Base Cutoff Current ICBO - - 0.1 A at VCB = 60 V Emitter Base Cutoff Current IEBO - - 0.1 A at VEB = 7 V Collector Base Breakdown Voltage V(BR)CBO 60 - - V at IC = 50 A Collector Emitter Breakdown Voltage

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