View mmdt3906 datasheet:

MMDT3906 MMDT3906 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (PNP+PNP) Complementary to MMDT3904 Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V I Collector Current -Continuous -200 A CP Collector Power Dissipation 200 W CT Junction Temperature 150 J Tstg Storage Temperature -55-+150 MARKING : K3N Absolute Maximum Ratings(Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 -5 V Emitter cut-o

Keywords - ALL TRANSISTORS DATASHEET

 mmdt3906.pdf Design, MOSFET, Power

 mmdt3906.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmdt3906.pdf Database, Innovation, IC, Electricity