View mmdt3906 datasheet:

MMDT3906MMDT3906MMDT3906MMDT39 0 6 DUAL TRANSISTOR(PNP+ PNP)SOT-363 6 54FEATURES 1Epitaxial planar die construction 23Ideal for low power amplification and switching MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -0.2 ACollector Power Dissipation PC 0.2 WThermal Resistance. Junction to Ambient Air RJA 625 /W Junction Temperature TJ 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified) Symbol Test conditions Min Parameter Typ Max UnitV(BR)CBO IC=-10A,IE=0 Collector-base breakdown voltage -40 VV(BR)CEO IC=-1mA,IB=0 Collector-emitter breakdown voltage -40 VV(BR)E

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